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FGA70N30T 300V, 70A PDP Trench IGBT
December 2007
FGA70N30T 300V, 70A PDP IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =1.5V @ IC = 40A * High input impedance * Fast switching * RoHS complaint
tm
General Description
Using Novel Trench IGBT Technology, Fairchild's new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Application
. PDP System
C
G
TO-3P
GCE
E
Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1)* PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100 C
o
Description
Collector-Emitter Voltage
Ratings
300 30 160 201 90.6 -55 to +150 -55 to +150 300
Units
V V A W W
oC o o
C C
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.2 * Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
---
Max.
0.62 40
Units
o o
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA70N30T Rev. A
FGA70N30T 300V, 70A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA70N30T
Device
FGA70N30TTU
Package
TO-3P
= 25oC unless otherwise noted
Packaging Type
Tube
Qty per Tube
30ea
Max Qty per Box
-
Electrical Characteristics T
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES
C
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
300 ----
-0.2 ---
--250 400
V V/oC uA nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC =20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC =40A, VGE = 15V IC =70A, VGE = 15V TC = 25oC IC = 70A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---3000 160 110 ---pF pF pF 3.0 ----4.5 1.2 1.5 1.8 1.9 5.5 1.5 ---V V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 200V, IC = 40A VGE = 15V VCC = 200V, IC = 40A RG = 15, VGE = 15V Resistive Load, TC = 125oC VCC = 200V, IC = 40A RG = 15, VGE = 15V Resistive Load, TC = 25oC -----------32 90 175 170 30 90 185 235 125 25 55 ---300 -------ns ns ns ns ns ns ns ns nC nC nC
2 FGA70N30T Rev. A
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FGA70N30T 300V, 70A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
TC = 25 C 20V 15V 12V
o
Figure 2. Typical Output Characteristics
160
TC = 125 C
o
10V
10V
Collector Current, IC [A]
Collector Current, IC [A]
120
120
20V 15V 12V
80
80
VGE = 8V
VGE = 8V
40
40
0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8
0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8
Figure 3. Typical Saturation Voltage Characteristics
160
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
160
Common Emitter TC = 25 C TC = 125 C
o o
100 VCE = 20V
Collector Current, IC [A]
Collector Current, IC [A]
120
TC = 25 C TC = 125 C
o
o
80
10
40
0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4
1 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.4
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter T = 25 C
C
o
2.0
16
70A
12
1.6
40A
8
40A 70A
1.2
IC = 20A
4
IC = 20A
0.8 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
4
8 12 16 Gate-Emitter Voltage, VGE [V]
20
3 FGA70N30T Rev. A
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FGA70N30T 300V, 70A PDP Trench IGBT
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter T = 125 C
C
o
Figure 8. Capacitance Characteristics
6000
Common Emitter VGE = 0V, f = 1MHz
5000
Capacitance [pF]
16
TC = 25 C Ciss
o
4000 3000 2000
12
8
40A 70A
Coss
4
IC = 20A
1000 0
Crss
0
4
8 12 16 Gate-Emitter Voltage, VGE [V]
20
1
10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate Charge Characteristics
15
Common Emitter TC = 25 C
o
Figure 10. SOA Characteristics
IC MAX (Pulsed) 50s 100s 1ms
Gate-Emitter Voltage, VGE [V]
100V
Vcc = 200V
Collector Current, IC [A]
12
100
9
10
IC MAX (Continuous) 10ms
6
1
Single Nonrepetitive Pulse TC = 25 C Curves must be derated linearly with increase in temperature
o
DC Operation
3
0.1
0 0 30 60 90 120 Gate Charge, Qg [nC] 150
0.01 0.1
1 10 100 Collector - Emitter Voltage, VCE [V]
500
Figure 11. Turn-on Characteristics vs. Gate Resistance
300
Figure 12. Turn-off Characteristics vs. Gate Resistance
3000
1000
Switching Time [ns]
100
Switching Time [ns]
tf
tr Common Emitter VCC = 200V, VGE = 15V IC = 40A TC = 25 C TC = 125 C
o o
100
td(off) Common Emitter VCC = 200V, VGE = 15V IC = 40A TC = 25 C
o o
td(on)
10 0 20 40 60 80 100
Gate Resistance, RG []
10 0 20 40
TC = 125 C
60
80
100
Gate Resistance, RG []
4 FGA70N30T Rev. A
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FGA70N30T 300V, 70A PDP Trench IGBT
Typical Performance Characteristics (Continued)
Figure 13. Turn-on Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 15 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter VGE = 15V, RG = 15 TC = 25 C tr
o o
Switching Time [ns]
100
Switching Time [ns]
TC = 125 C
TC = 125 C
td(on)
tf td(off) tf
10 0 20 40 60 80 100
Collector Current, IC [A]
100
0
20
40
60
80
100
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
2000
Figure 16. Switching Loss vs. Collector Current
10000
Common Emitter VGE = 15V, RG = 15
1000
Eoff
TC = 25 C
o
Switching Loss [uJ]
Switching Loss [uJ]
1000
TC = 125 C
o
100
Eon Common Emitter VCC = 200V, VGE = 15V IC = 40A TC = 25 C TC = 125 C
o o
100
Eon
Eoff
10
0
20
40 60 80 Gate Resistance, RG []
100
10 0 20 40 60 80 100
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
1
0.5
Thermal Response [Zthjc]
0.1
0.2 0.1 0.05
0.01
0.02 0.01 single pulse
PDM t1 t2
1E-3 0.01 0.1 1 10
1E-3 1E-5
1E-4
Rectangular Pulse Duration [sec]
5 FGA70N30T Rev. A
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FGA70N30T 300V, 70A PDP Trench IGBT
TO-3PN
6 FGA70N30T Rev. A
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FGA70N30T 300V, 70A PDP Trench IGBT
tm
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTO HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdge PowerSaverTM PowerTrench Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R)
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information Preliminary
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
Rev. I20 This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I25
7 FGA70N30T Rev. A
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